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Title: Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)
  2. ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council, Oxon OX11 0QX (United Kingdom)
Publication Date:
OSTI Identifier:
22494691
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPTH; FERROMAGNETIC MATERIALS; LAYERS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETOMETERS; NEUTRONS; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION