skip to main content

Title: Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.
Authors:
 [1] ;  [1] ;  [2]
  1. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-713 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22494690
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; DAMAGE; ELECTRIC FIELDS; MAGNETIC FIELDS; MEMORY DEVICES; OPTIMIZATION; SPIN; STABILITY; TORQUE