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Title: Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films

Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22494689
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CHARGE CARRIERS; FERMI LEVEL; FERRIMAGNETISM; HALL EFFECT; MAGNETIZATION; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; PEROVSKITE; THIN FILMS