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Title: Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [2] ;  [3]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China)
  2. Department of Applied Physics, Tohoku University, Sendai, Miyagi 980-8579 (Japan)
  3. (China)
Publication Date:
OSTI Identifier:
22494685
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; IRON COMPOUNDS; LAYERS; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; NICKEL COMPOUNDS; SENSITIVITY; SENSORS; SPIN; THICKNESS; TUNNEL JUNCTIONS