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Title: Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

We report ab-initio results for electron-phonon (e-ph) coupling and display the existence of a large variation in the coupling parameter as a function of electron and phonon dispersion. This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, we evaluate the imaginary part of the electron self-energy in order to obtain the associated scattering rates. The temperature dependence is seen through calculations of the scattering rates at 0 K and 300 K. The results provide a basis for understanding the impacts of phonon scattering vs. orientation and geometry in the design of devices, and in analysis of transport phenomena. This provides an additional tool for engineering the transfer of energy from carriers to the lattice.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)
  2. (United States)
  3. Departments of Physics and Electrical and Computer Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609 (United States)
Publication Date:
OSTI Identifier:
22494679
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DISPERSIONS; ELECTRON-PHONON COUPLING; ELECTRONS; ENERGY RANGE; GERMANIUM; MATRIX ELEMENTS; ORIENTATION; PHONONS; SCATTERING; SELF-ENERGY; SILICON; TEMPERATURE DEPENDENCE