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Title: Band alignment at AlN/Si (111) and (001) interfaces

To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600–1050 °C) and Al pre-exposures (1–15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be −3.5 ± 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 ± 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be −2.7 ± 0.3 and −0.4 ± 0.3 eV, respectively.
Authors:
;  [1] ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22494667
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ALUMINIUM NITRIDES; CHEMICAL BONDS; CRYSTAL GROWTH; EV RANGE; GALLIUM NITRIDES; GRAIN ORIENTATION; INTERFACES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; SILICON; TEMPERATURE DEPENDENCE; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY