Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Department of Physics, BITS-Pilani Hyderabad Campus, Secunderabad, Andhra Pradesh 500078 (India)
The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.
- OSTI ID:
- 22494665
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
BISMUTH SELENIDES
BONDING
CONCENTRATION RATIO
DEFECTS
DENSITY FUNCTIONAL METHOD
FINE STRUCTURE
LATTICE PARAMETERS
MANGANESE IONS
MANGANESE SELENIDES
MOLECULAR BEAM EPITAXY
THIN FILMS
TOPOLOGY
VAN DER WAALS FORCES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY