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Title: Defect induced structural and thermoelectric properties of Sb{sub 2}Te{sub 3} alloy

Structural and thermoelectric properties of metallic and semiconducting Sb{sub 2}Te{sub 3} are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample has higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb{sub 2}Te{sub 3} hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower, and power factor. Thermopower data indicate p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb{sub 2}Te{sub 3}. Role of different scattering mechanism on the thermoelectric property of Sb{sub 2}Te{sub 3} is discussed.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [1] ;  [4]
  1. Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)
  2. Department of Physics, Raiganj University, Uttar Dinajpur 733 134 (India)
  3. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
  4. (India)
Publication Date:
OSTI Identifier:
22494663
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTIMONY TELLURIDES; DEFECTS; ELECTRIC CONDUCTIVITY; METALLICITY; POWER FACTOR; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION