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Title: Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China)
  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  3. Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China)
  4. Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)
Publication Date:
OSTI Identifier:
22494634
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INDIUM NITRIDES; LIGHT EMITTING DIODES; POTENTIALS; QUANTUM EFFICIENCY; RECOMBINATION; RELAXATION; STARK EFFECT; TIME RESOLUTION