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Title: Molecular dynamics simulation of graphene growth at initial stage on Ni(100) facet for low flux C energy by CVD

In this study, atomic simulation for graphene growth on Ni (100) at initial stage via chemical vapor deposition method has been developed. The C-C atoms interaction was performed by Terasoff potential mean while Ni-Ni interaction was specified by EAM (Embedded Atom Modified). On the other hand, we used very simple interatomic potential to describe Ni-C interaction during deposition process. From this simulation, it shows that the formation of graphene is not occurs through a combined deposition mechanism on Ni substrate but via C segregation. It means, Ni-C amorphous is source for graphene growth when cooling down of Ni substrate. This result is appropriate with experiments, tight binding and quantum mechanics simulation.
Authors:
; ; ; ;  [1]
  1. Departement of Physics, Institute of Technology Bandung, Tamansari 64 Street, East Java (Indonesia)
Publication Date:
OSTI Identifier:
22494632
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1710; Journal Issue: 1; Conference: NNS2015: 6. nanoscience and nanotechnology symposium, Surakarta (Indonesia), 4-5 Nov 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CHEMICAL VAPOR DEPOSITION; COOLING; GRAPHENE; MOLECULAR DYNAMICS METHOD; QUANTUM MECHANICS; SEGREGATION; SIMULATION; SUBSTRATES