Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter
Journal Article
·
· AIP Conference Proceedings
- Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)
- Collaborative Research Center, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)
- Kyoshin Electric Co. Ltd., 18, Goshonouchi-Nishimachi, Shichijo, Shimogyou-ku, Kyoto 600-8865 (Japan)
- Clean Venture 21 Co., 38 Ishihara Douno-Ushirocho, Kissyouin, Minami-ku, Kyoto 601-8355 (Japan)
A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.
- OSTI ID:
- 22494595
- Journal Information:
- AIP Conference Proceedings, Vol. 1709, Issue 1; Conference: IRAGO conference 2015: 360 degree outlook on critical scientific and technological challenges for a sustainable society, Aichi (Japan), 22-23 Oct 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
A Megawatt-Scale Medium-Voltage High-Efficiency High Power Density “SiC+Si” Hybrid Three-Level ANPC Inverter for Aircraft Hybrid-Electric Propulsion Systems
Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors
SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs
Journal Article
·
Tue Aug 06 00:00:00 EDT 2019
· IEEE Transactions on Industry Applications
·
OSTI ID:22494595
Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors
Journal Article
·
Fri Jan 01 00:00:00 EST 2010
· IET Power Electronics
·
OSTI ID:22494595
+1 more
SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs
Journal Article
·
Fri Jan 01 00:00:00 EST 2010
· IET Proceedings on Power Electronics
·
OSTI ID:22494595
+1 more