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Title: Investigation of HCl-based surface treatment for GaN devices

Abstract

Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.

Authors:
 [1]; ; ; ;  [2];  [2]
  1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
  2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
Publication Date:
OSTI Identifier:
22494584
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1709; Journal Issue: 1; Conference: IRAGO conference 2015: 360 degree outlook on critical scientific and technological challenges for a sustainable society, Aichi (Japan), 22-23 Oct 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEPOSITION; FABRICATION; GALLIUM NITRIDES; HYDROCHLORIC ACID; MATHEMATICAL SOLUTIONS; OXIDES; SILICON NITRIDES; SURFACE TREATMENTS; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Okada, Hiroshi, Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Shinohara, Masatohi, Kondo, Yutaka, Sekiguchi, Hiroto, Yamane, Keisuke, Wakahara, Akihiro, and Electronics-Inspired Interdisciplinary Research Institute. Investigation of HCl-based surface treatment for GaN devices. United States: N. p., 2016. Web. doi:10.1063/1.4941210.
Okada, Hiroshi, Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Shinohara, Masatohi, Kondo, Yutaka, Sekiguchi, Hiroto, Yamane, Keisuke, Wakahara, Akihiro, & Electronics-Inspired Interdisciplinary Research Institute. Investigation of HCl-based surface treatment for GaN devices. United States. https://doi.org/10.1063/1.4941210
Okada, Hiroshi, Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Shinohara, Masatohi, Kondo, Yutaka, Sekiguchi, Hiroto, Yamane, Keisuke, Wakahara, Akihiro, and Electronics-Inspired Interdisciplinary Research Institute. 2016. "Investigation of HCl-based surface treatment for GaN devices". United States. https://doi.org/10.1063/1.4941210.
@article{osti_22494584,
title = {Investigation of HCl-based surface treatment for GaN devices},
author = {Okada, Hiroshi and Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 and Shinohara, Masatohi and Kondo, Yutaka and Sekiguchi, Hiroto and Yamane, Keisuke and Wakahara, Akihiro and Electronics-Inspired Interdisciplinary Research Institute},
abstractNote = {Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.},
doi = {10.1063/1.4941210},
url = {https://www.osti.gov/biblio/22494584}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1709,
place = {United States},
year = {Mon Feb 01 00:00:00 EST 2016},
month = {Mon Feb 01 00:00:00 EST 2016}
}