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Title: Resistive switching behavior of RF magnetron sputtered ZnO thin films

The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.
Authors:
;  [1]
  1. Centre for Nano and Soft Matter Sciences, Jalahalli, Bangalore-560013 (India)
Publication Date:
OSTI Identifier:
22493953
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER IONS; CRYSTALS; ELECTRIC CONDUCTIVITY; FILAMENTS; OXYGEN; PLATINUM; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; VACANCIES; VOLATILITY; X-RAY DIFFRACTION; ZINC OXIDES LAT