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Title: Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
  2. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
  3. Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
Publication Date:
OSTI Identifier:
22493943
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRIC CONDUCTIVITY; GERMANIDES; GERMANIUM ALLOYS; INTERFACES; LAYERS; MICROELECTRONICS; NICKEL ALLOYS; NICKEL COMPOUNDS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TEMPERATURE DEPENDENCE