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Title: Switching kinetics of SiC resistive memory for harsh environments

Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest R{sub OFF}/R{sub ON} ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using {sup 60}Co gamma irradiation.
Authors:
; ;  [1] ; ; ; ;  [2]
  1. Nano Research Group, Electronics and Computer Science, University of Southampton, Southampton, Hampshire, United Kingdom, SO171BJ (United Kingdom)
  2. Faculty of Engineering and the Environment, University of Southampton, Southampton, Hampshire, United Kingdom, SO171BJ (United Kingdom)
Publication Date:
OSTI Identifier:
22493941
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT 60; COPPER; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FILAMENTS; GAMMA RADIATION; GOLD; JOULE HEATING; PHYSICAL RADIATION EFFECTS; RELIABILITY; SILICON CARBIDES; THERMAL CONDUCTIVITY