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Title: Light emission from silicon with tin-containing nanocrystals

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si{sub 1−x−y}Sn{sub x}C{sub y}, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 {sup ∘}C to 900 {sup ∘}C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈10{sup 17} cm{sup −3} and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 {sup ∘}C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.
Authors:
 [1] ; ; ; ; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark)
  2. (Denmark)
  3. Belarussian State University, Praspyekt Nyezalyezhnastsi 4, 220030 Minsk (Belarus)
  4. Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C (Denmark)
Publication Date:
OSTI Identifier:
22493937
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BACKSCATTERING; CONCENTRATION RATIO; DENSITY; DIAMONDS; EMISSION SPECTROSCOPY; EPITAXY; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON; SILICON CARBIDES; SUBSTRATES; TIN; TIN COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE RADIATION