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Title: Porosity-dependent fractal nature of the porous silicon surface

Porous silicon films with porosity ranging from 42% to 77% were fabricated by electrochemical anodization under different current density. We used atomic force microscopy and dynamic scaling theory for deriving the surface roughness profile and processing the topography of the porous silicon layers, respectively. We first compared the topography of bare silicon surface with porous silicon and then studied the effect of the porosity of porous silicon films on their scaling behavior by using their self-affinity nature. Our work demonstrated that silicon compared to the porous silicon films has the highest Hurst parameter, indicating that the formation of porous layer due to the anodization etching of silicon surface leads to an increase of its roughness. Fractal analysis revealed that the evolution of the nanocrystallites’ fractal dimension along with porosity. Also, we found that both interface width and Hurst parameter are affected by the increase of porosity.
Authors:
;  [1]
  1. Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22493935
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANODIZATION; ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; CURRENT DENSITY; ELECTROCHEMISTRY; ETCHING; FILMS; FRACTALS; INTERFACES; LAYERS; NANOSTRUCTURES; POROSITY; POROUS MATERIALS; ROUGHNESS; SILICON; SURFACES