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Title: Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots

We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom)
Publication Date:
OSTI Identifier:
22493906
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; CARBON; DROPLETS; EFFECTIVE MASS; ELECTRONS; EPITAXY; GALLIUM ARSENIDES; HOLES; INTERFACES; PHONONS; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY