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Title: The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role ofmore » atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.« less
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3] ; ;  [4] ;  [5]
  1. Materials Science and Engineering Department, University of California, San Diego, California 9500 (United States)
  2. Materials Science and Engineering Department, Stanford University, Stanford, California 94305 (United States)
  3. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  4. Global Foundries, 2600 Great America Way, Santa Clara, California 95054 (United States)
  5. Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22493180
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 143; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HAFNIUM OXIDES; INDIUM ARSENIDES; NUCLEATION; OXYGEN; PULSES; SCANNING TUNNELING MICROSCOPY; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY