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Title: Mechanism of abnormally slow crystal growth of CuZr alloy

Abstract

Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. We find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growthmore » of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed.« less

Authors:
 [1]
  1. School of Physics, Beijing Institute of Technology, Beijing 100081 (China)
Publication Date:
OSTI Identifier:
22493164
Resource Type:
Journal Article
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 143; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-9606
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALLOY SYSTEMS; ALLOYS; ATOMS; COLLISIONS; COMPRESSION; CRYSTAL GROWTH; DENSITY; DIFFUSION; GLASS; LIQUID CRYSTALS; METALS; MOLECULAR DYNAMICS METHOD; SIMULATION; STRESSES; TEMPERATURE DEPENDENCE

Citation Formats

Yan, X. Q., Lü, Y. J., E-mail: yongjunlv@bit.edu.cn, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027. Mechanism of abnormally slow crystal growth of CuZr alloy. United States: N. p., 2015. Web. doi:10.1063/1.4934227.
Yan, X. Q., Lü, Y. J., E-mail: yongjunlv@bit.edu.cn, & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027. Mechanism of abnormally slow crystal growth of CuZr alloy. United States. https://doi.org/10.1063/1.4934227
Yan, X. Q., Lü, Y. J., E-mail: yongjunlv@bit.edu.cn, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027. 2015. "Mechanism of abnormally slow crystal growth of CuZr alloy". United States. https://doi.org/10.1063/1.4934227.
@article{osti_22493164,
title = {Mechanism of abnormally slow crystal growth of CuZr alloy},
author = {Yan, X. Q. and Lü, Y. J., E-mail: yongjunlv@bit.edu.cn and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027},
abstractNote = {Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. We find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growth of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed.},
doi = {10.1063/1.4934227},
url = {https://www.osti.gov/biblio/22493164}, journal = {Journal of Chemical Physics},
issn = {0021-9606},
number = 16,
volume = 143,
place = {United States},
year = {Wed Oct 28 00:00:00 EDT 2015},
month = {Wed Oct 28 00:00:00 EDT 2015}
}