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Title: Impact of boron on the step-free area formation on Si(111) mesa structures

We report about the influence of boron (B) on surface morphology of Si layers grown by molecular beam epitaxy on Si(111) mesas. Dimension of step-free mesa areas is reduced in comparison to pristine Si and scales with the B-coverage. This can be explained by a reduced mass transport on the Si surface in the presence of B-induced √3 × √3 surface structure which is due to a reduced Si equilibrium free adatom density. We demonstrate that a suitable combination of initial B coverage and Si layer thickness results in large step free areas and B doping concentration up to 4 × 10{sup 18 }cm{sup −3}.
Authors:
; ;  [1]
  1. Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany)
Publication Date:
OSTI Identifier:
22493109
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; BORON; CRYSTAL DOPING; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SILICON; SURFACES; THICKNESS