skip to main content

Title: Generation of valley-polarized electron beam in bilayer graphene

We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents.
Authors:
 [1]
  1. Department of Physics, Dankook University, Dongnamgu Anseodong 29, Cheonan 330-714 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22493095
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAM CURRENTS; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON TRANSFER; GRAPHENE; INTERFACES; PEAKS; POLARIZATION; SEMICONDUCTOR JUNCTIONS