skip to main content

Title: Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22493080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; INDIUM NITRIDES; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; SILICON; SPECTROSCOPY; SURFACES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS