Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4937902· OSTI ID:22493080

Watanabe, Arata; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis ^[1]; Egawa, Takashi ^[1]

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1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

• OSTI ID: 22493080
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
ANNEALING
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
INDIUM NITRIDES
MORPHOLOGY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SILICON
SPECTROSCOPY
SURFACES
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS