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Title: Insight into the epitaxial growth of high optical quality GaAs{sub 1–x}Bi{sub x}

The ternary alloy GaAs{sub 1–x}Bi{sub x} is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs{sub 1–x}Bi{sub x} epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In{sub y}Ga{sub 1–y}As. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs{sub 1–x}Bi{sub x} in optoelectronic devices.
Authors:
; ;  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22493077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; BISMUTH; EPITAXY; GALLIUM ARSENIDES; INFRARED RADIATION; LINE WIDTHS; MEV RANGE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SURFACES; SURFACTANTS; SYNTHESIS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS; ULTRAVIOLET RADIATION