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Title: Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativistic electron beam

In this paper we discuss a relative time-of-arrival measurement scheme between an electron beam and a mid-infrared laser pulse based on the electron-beam controlled transmission in semiconductor materials. This technique can be used as a time-stamping diagnostic in ultrafast electron diffraction or microscopy. In particular, our characterization of Germanium demonstrates that sub-ps time-of-arrival sensitivity could be achieved in a single shot and with very low charge beams (<1 pC). Detailed measurements as a function of the beam charge and the laser wavelength offer insights on the free carrier dynamics in the semiconductor upon excitation by the electron beam.
Authors:
;  [1] ;  [2]
  1. Department of Physics and Astronomy, UCLA, Los Angeles, California 90095 (United States)
  2. INFN-LNF, Via E. Fermi, 40, 00044 Frascati, Roma (Italy)
Publication Date:
OSTI Identifier:
22493066
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAM TRANSPORT; CARRIERS; ELECTRON BEAMS; ELECTRON DIFFRACTION; EXCITATION; GERMANIUM; INFRARED RADIATION; LASER RADIATION; MICROSCOPY; PULSES; RELATIVISTIC RANGE; SEMICONDUCTOR MATERIALS; WAVELENGTHS