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Title: Structural and optical study of Ce segregation in Ce-doped SiO{sub 1.5} thin films

Cerium doped SiO{sub 1.5} thin films fabricated by evaporation and containing silicon nanocrystals were investigated by atom probe tomography. The effect of post-growth annealing treatment has been systematically studied to correlate the structural properties obtained by atom probe tomography to the optical properties measured by photoluminescence spectroscopy. The atom probe results demonstrated the formation of Ce-Si rich clusters upon annealing at 900 °C which leads to a drastic decrease of the Ce-related luminescence. At 1100 °C, pure Si nanocrystals and optically active cerium silicate compounds are formed. Consequently, the Ce-related luminescence is found to re-appear at this temperature while no Si-nanocrystal related luminescence is observed for films containing more than 3% Ce.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Normandie Université, Avenue de l'Université, BP 12, 76801 St Etienne du Rouvray (France)
  2. Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, 54506 Vandoeuvre-lès-Nancy (France)
Publication Date:
OSTI Identifier:
22493062
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CERIUM; CERIUM SILICATES; CRYSTAL STRUCTURE; DOPED MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEGREGATION; SILICON; SILICON OXIDES; SPECTROSCOPY; THIN FILMS; TOMOGRAPHY