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Title: Structural and optical properties of axial silicon-germanium nanowire heterojunctions

Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States)
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  3. National Research Council, Ottawa, Ontario K1A 0R6 (Canada)
Publication Date:
OSTI Identifier:
22493058
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL DEFECTS; CRYSTAL GROWTH; GERMANIUM; GERMANIUM SILICIDES; HETEROJUNCTIONS; LASER RADIATION; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN EFFECT; SILICON; STRAINS; STRESSES; THERMAL CONDUCTIVITY; THERMAL EXPANSION