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Title: Effects of laser fluence on silicon modification by four-beam laser interference

Abstract

This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm{sup 2}, 495 mJ/cm{sup 2}, and 637 mJ/cm{sup 2}, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.

Authors:
;  [1]; ;  [1]; ; ;  [1]
  1. JR3CN and CNM, Changchun University of Science and Technology, Changchun 130022 (China)
Publication Date:
OSTI Identifier:
22493047
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAM-BEAM INTERACTIONS; EQUATIONS; HEAT FLUX; HEAT TRANSFER; INTERFERENCE; LASER RADIATION; MONOCRYSTALS; PLASMA; PULSES; RADIATION EFFECTS; SILICON; WAVELENGTHS

Citation Formats

Zhao, Le, Li, Dayou, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, Wang, Zuobin, Yue, Yong, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, DCSSE, Xi'an Jiaotong-Livepool University, Suzhou 215123, Zhang, Jinjin, Yu, Miao, and Li, Siwei. Effects of laser fluence on silicon modification by four-beam laser interference. United States: N. p., 2015. Web. doi:10.1063/1.4937579.
Zhao, Le, Li, Dayou, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, Wang, Zuobin, Yue, Yong, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, DCSSE, Xi'an Jiaotong-Livepool University, Suzhou 215123, Zhang, Jinjin, Yu, Miao, & Li, Siwei. Effects of laser fluence on silicon modification by four-beam laser interference. United States. https://doi.org/10.1063/1.4937579
Zhao, Le, Li, Dayou, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, Wang, Zuobin, Yue, Yong, JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU, DCSSE, Xi'an Jiaotong-Livepool University, Suzhou 215123, Zhang, Jinjin, Yu, Miao, and Li, Siwei. 2015. "Effects of laser fluence on silicon modification by four-beam laser interference". United States. https://doi.org/10.1063/1.4937579.
@article{osti_22493047,
title = {Effects of laser fluence on silicon modification by four-beam laser interference},
author = {Zhao, Le and Li, Dayou and JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU and Wang, Zuobin and Yue, Yong and JR3CN and IRAC, University of Bedfordshire, Luton LU1 3JU and DCSSE, Xi'an Jiaotong-Livepool University, Suzhou 215123 and Zhang, Jinjin and Yu, Miao and Li, Siwei},
abstractNote = {This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm{sup 2}, 495 mJ/cm{sup 2}, and 637 mJ/cm{sup 2}, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.},
doi = {10.1063/1.4937579},
url = {https://www.osti.gov/biblio/22493047}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 118,
place = {United States},
year = {Mon Dec 21 00:00:00 EST 2015},
month = {Mon Dec 21 00:00:00 EST 2015}
}