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Title: Self-organized titanium oxide nano-channels for resistive memory application

Towards developing next generation scalable TiO{sub 2}-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar{sup +}-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} at ambient temperature is presented. Although x-ray diffraction results suggest the amorphization of as-grown TiO{sub 2} layers, detailed transmission electron microscopy study reveals fluence-dependent evolution of voids and eventual formation of self-organized nano-channels between them. Moreover, gradual increase of TiO/Ti{sub 2}O{sub 3} in the near surface region, as monitored by x-ray photoelectron spectroscopy, establishes the upsurge in oxygen deficient centers. The impact of structural and chemical modification on local RS behavior has also been investigated by current-voltage measurements in conductive atomic force microscopy, while memory application is manifested by fabricating Pt/TiO{sub 2}/Pt/Ti/SiO{sub 2}/Si devices. Finally, the underlying mechanism of our experimental results has been analyzed and discussed in the light of oxygen vacancy migration through nano-channels.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ; ;  [4]
  1. Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314 (India)
  2. Department of Physics, National Institute of Technology, Silchar, Assam 788 010 (India)
  3. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)
  4. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
Publication Date:
OSTI Identifier:
22493032
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMBIENT TEMPERATURE; AMORPHOUS STATE; ARGON IONS; ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MEMORY DEVICES; NANOSTRUCTURES; OXYGEN; SILICON OXIDES; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; VOIDS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY