skip to main content

SciTech ConnectSciTech Connect

Title: Highly efficient conductance control in a topological insulator based magnetoelectric transistor

The spin-momentum interlocked properties of the topological insulator (TI) surface states are exploited in a transistor-like structure for efficient conductance control in the TI-magnet system. Combined with the electrically induced magnetization rotation as part of the gate function, the proposed structure takes advantage of the magnetically modulated TI electronic band dispersion in addition to the conventional electrostatic barrier. The transport analysis coupled with the magnetic simulation predicts super-steep current-voltage characteristics near the threshold along with the GHz operating frequencies. Potential implementation to a complementary logic is also examined. The predicted characteristics are most suitable for applications requiring low power or those with small signals.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22493031
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRICAL INSULATORS; ELECTRICAL PROPERTIES; GHZ RANGE; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETS; ROTATION; SIMULATION; SPIN; TRANSISTORS