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Title: Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.
Authors:
; ; ;  [1]
  1. School of VLSI Technology, IIEST, Shibpur, Howrah 711103 (India)
Publication Date:
OSTI Identifier:
22493030
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; HOLES; LAYERS; MOSFET; N-TYPE CONDUCTORS; ORIENTATION; PHOSPHORUS; P-TYPE CONDUCTORS; STACKING FAULTS