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Title: Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
  2. (Europe) Ltd., Pascal Close, St. Mellons, Cardiff CF3 0LW (United Kingdom)
  3. IQE (Europe) Ltd., Pascal Close, St. Mellons, Cardiff CF3 0LW (United Kingdom)
Publication Date:
OSTI Identifier:
22493011
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; CHARGE TRANSPORT; DOPED MATERIALS; ELECTRON BEAM INJECTION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; SIMULATION; SUBSTRATES; TRAPPING