Understanding the doping effects on the structural and electrical properties of ultrathin carbon nanotube networks
- Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, 305-8565 Tsukuba (Japan)
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, 305-8565 Tsukuba (Japan)
Similar to other semiconductor technology, doping of carbon nanotube (CNT) thin film is of great significance for performance improvement or modification. However, it still remains a challenge to seek a stable and effective dopant. In this paper, we unitize several spectroscopic techniques and electrical characterizations under various conditions to investigate the effects of typical dopants and related methods. Nitric acid (HNO{sub 3}) solution, I{sub 2} vapor, and CuI nanoparticles are used to modify a series of ultrathin CNT networks. Although efficient charge transfer is achieved initially after doping, HNO{sub 3} is not applicable because it suffers from severe reliability problems in structural and electrical properties, and it also causes a number of undesired structural defects. I{sub 2} vapor doping at 150 °C can form some stable C-I bonding structures, resulting in relatively more stable but less efficient electrical performances. CuI nanoparticles seem to be an ideal dopant. Photonic curing enables the manipulation of CuI, which not only results in the construction of novel CNT-CuI hybrid structures but also encourages the deepest level of charge transfer doping. The excellent reliability as well as processing feasibility identify the bright perspective of CNT-CuI hybrid film for practical applications.
- OSTI ID:
- 22493010
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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