Improvement of the electrical contact resistance at rough interfaces using two dimensional materials
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China)
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China)
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering, Peking University, Beijing 100871 (China)
Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.
- OSTI ID:
- 22493008
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COATINGS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRON TRANSFER
GRAPHENE
INTERFACES
LAYERS
NANOSTRUCTURES
ROUGHNESS
SHEETS
THICKNESS
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS