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Title: Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor

A triple-dot single-electron transistor was fabricated on silicon-on-insulator wafer using pattern-dependent oxidation. A specially designed one-dimensional silicon wire having small constrictions at both ends was converted to a triple-dot single-electron transistor by means of pattern-dependent oxidation. The fabrication of the center dot involved quantum size effects and stress-induced band gap reduction, whereas that of the two side dots involved thickness modulation because of the complex edge structure of two-dimensional silicon. Single-electron turnstile operation was confirmed at 8‚ÄČK when a 100-mV, 1-MHz square wave was applied. Monte Carlo simulations indicated that such a device with inhomogeneous tunnel and gate capacitances can exhibit single-electron transfer.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)
  2. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198 (Japan)
  3. Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)
  4. Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu 432-8011 (Japan)
Publication Date:
OSTI Identifier:
22493000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; COMPUTERIZED SIMULATION; ELECTRON TRANSFER; MHZ RANGE; MONTE CARLO METHOD; OXIDATION; QUANTUM DOTS; SILICON; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS; WIRES