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Title: Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The results given by the different models are discussed.
Authors:
;  [1]
  1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia and N. I. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22492975
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTENNAS; DETECTION; DISTRIBUTION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON GAS; FIELD EFFECT TRANSISTORS; IMPEDANCE; NONLINEAR PROBLEMS; ONE-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS