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Title: Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples

The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers.
Authors:
 [1] ;  [2]
  1. CEITEC, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic)
  2. ON Semiconductor, 1. máje 2230, 75661 Rožnov p. Radhoštěm (Czech Republic)
Publication Date:
OSTI Identifier:
22492956
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 19; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; ATTENUATION; ELLIPSOMETRY; EV RANGE; LAYERS; PHOTONS; REFRACTIVE INDEX; RESONATORS; SILICON; SPECTRA; SURFACES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION