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Title: Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields.
Authors:
 [1] ;  [2]
  1. Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22492955
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BINDING ENERGY; EXCITONS; GALLIUM ANTIMONIDES; GROUND STATES; INDIUM ARSENIDES; MAGNETIC FIELDS; QUANTUM WELLS; RECOMBINATION; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL SYSTEMS; WAVE FUNCTIONS