Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation
- Physics Department, Moscow State Pedagogical University, Moscow 119991 (Russian Federation)
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)
- Moscow Institute of Physics and Technology (State University), Dolgoprudny 141700 (Russian Federation)
- National Research Centre “Kurchatov Institute,” Moscow 123128 (Russian Federation)
Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
- OSTI ID:
- 22492942
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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