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Title: A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

The effect of InGaN/GaN superlattices (SLs) on quantum efficiency and forward voltage of vertical blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LED) grown on Si substrate has been experimentally and theoretically investigated. We have prepared two LED samples, in which the 30 and 45 periods of SLs are inserted between MQW active layers and n-GaN layer, respectively. Electroluminescence measurement shows that the LED with 45 periods of SLs has higher quantum efficiency but lower forward voltage. It is observed that V-shaped pits grow up in size with an increase in SLs period number by means of scan transmission electron microscope and secondary ion mass spectrometry. Further numerical simulations confirm that the performance improvement of LED by SLs is mainly ascribed to enhancing hole injection from the V-shaped pits.
Authors:
; ; ; ;  [1]
  1. National Institute for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)
Publication Date:
OSTI Identifier:
22492934
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; GALLIUM NITRIDES; HOLES; LAYERS; LIGHT EMITTING DIODES; MASS SPECTROSCOPY; PERFORMANCE; QUANTUM EFFICIENCY; QUANTUM WELLS; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY