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Title: Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

Supercoupling effect prevents the simultaneous formation of inversion and accumulation channels at the two interfaces of ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Our work highlights that short-channel effects enhance supercoupling and turn it into a two-dimensional mechanism. The lateral influence of source and drain terminals is evidenced with experimental data and examined by 2D numerical simulations which reveal the roles of gate length and drain bias. The critical Si-film thickness, below which supercoupling arises, is significantly increased in short-channel transistors. The impact of back-gate and drain bias, BOX thickness, and quantum effects is documented and practical applications are discussed.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4] ; ;  [1]
  1. Institut d'Électronique et des Systèmes, University of Montpellier, 34095 Montpellier Cedex 5 (France)
  2. (France)
  3. IMEP-LAHC, MINATEC, Grenoble-INP, 38016 Grenoble Cedex 1 (France)
  4. CEA-LETI, MINATEC, 38054 Grenoble Cedex 1 (France)
Publication Date:
OSTI Identifier:
22492915
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPUTERIZED SIMULATION; FIELD EFFECT TRANSISTORS; FILMS; INTERFACES; LENGTH; MOS TRANSISTORS; SILICON; THICKNESS