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Title: A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

In this work, the electrical properties of dislocation loops and their role in the generation of leakage currents in p-n or Schottky junctions were investigated both experimentally and through simulations. Deep Level Transient Spectroscopy (DLTS) reveals that the implantation of silicon with 2 × 10{sup 15} Ge cm{sup −2} and annealing between 1000 °C and 1100 °C introduced two broad electron levels E{sub C} − 0.38 eV and E{sub C} − 0.29 eV in n-type samples and a single broad hole trap E{sub V} + 0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocation loops) formed during annealing. Dislocation loops are responsible for the significant increase of leakage currents which are attributed to the same energy levels. The comparison between structural defect parameters and electrical defect concentrations indicates that atoms located on the loop perimeter are the likely sources of the measured DLTS signals. The combined use of defect models and recently developed DLTS simulation allows reducing the number of assumptions and fitting parameters needed for the simulation of leakage currents, therefore improving their predictability. It is found that simulations based on the coupled-defect-levels model reproduce well the measured leakage current values and their field dependence behaviour, indicatingmore » that leakage currents can be successfully simulated on the exclusive basis of the experimentally observed energy levels.« less
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ;  [5] ; ;  [1] ;  [2]
  1. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)
  2. (France)
  3. (Zimbabwe)
  4. ETH Zürich, Gloriastr. 35, 8092 Zurich (Switzerland)
  5. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
Publication Date:
OSTI Identifier:
22492912
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DISLOCATIONS; ELECTRICAL PROPERTIES; ENERGY LEVELS; HOLES; LEAKAGE CURRENT; SILICON; SIMULATION; TRAPS