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Title: Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

We report room-temperature (RT) electroluminescence (EL) from InAs/InAs{sub x}P{sub 1−x} quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAs{sub x}P{sub 1−x} metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared laser diodes on InAsP/InP.
Authors:
;  [1] ; ;  [2]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
22492901
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; CARRIERS; DISLOCATIONS; ELECTROLUMINESCENCE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LASERS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; QUANTUM WELLS; QUENCHING; STRAINS; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS