Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films
- Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060 (United States)
- Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States)
- Department of Electrical and Computer Engineering, University of Alabama in Huntsville, 301 Sparkman Drive, Huntsville, Alabama 35899 (United States)
Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmon theoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes.
- OSTI ID:
- 22492885
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 17; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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