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Title: Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.
Authors:
; ; ; ;  [1]
  1. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
Publication Date:
OSTI Identifier:
22492878
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; CADMIUM SULFIDES; CADMIUM TELLURIDES; DENSITY OF STATES; FERMI LEVEL; FILL FACTORS; GRAIN BOUNDARIES; LAYERS; POLYCRYSTALS; RECOMBINATION; SOLAR CELLS; SPECTROSCOPY; STRAINS; THIN FILMS; TRAPPING; ZINC OXIDES; ZINC SELENIDES; ZINC SULFIDES