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Title: Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications

Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are calculated to be 1.93 and −2.36 eV, respectively. The p-type conduction in NMZO film has been confirmed by Hall measurement and band structure. Moreover, the effect of Ar{sup +} ion sputtering on the valence band onset values of NMZO and GZO thin films has been investigated. This asymmetric waveguide structure formed by the lower refractive index of GZO than that of NMZO indicates that easy extraction of photons generated in GZO through the NMZO layer into free space. The asymmetric waveguide structure has potential applications to produce ZnO-based light emitters with high extraction efficiency.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Indore 453446 (India)
  2. Indus Synchrotron Utilization Division, Department of Atomic Energy, Raja Ramanna Center for Advanced Technology, Indore 452013 (India)
  3. Mechanical and Optical Support Section, Department of Atomic Energy, Raja Ramanna Center for Advanced Technology, Indore 452013 (India)
Publication Date:
OSTI Identifier:
22492869
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON IONS; DOPED MATERIALS; HETEROJUNCTIONS; PHOTOELECTRON SPECTROSCOPY; PHOTONS; REFRACTIVE INDEX; SPUTTERING; THIN FILMS; ULTRAVIOLET RADIATION; ZINC OXIDES