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Title: Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.
Authors:
; ;  [1]
  1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)
Publication Date:
OSTI Identifier:
22492863
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DISLOCATIONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; QUANTUM WELLS; SPECTROSCOPY; WAVELENGTHS