Thermal stability of boron nitride/silicon p-n heterojunction diodes
Abstract
Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.
- Authors:
-
- Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)
- Publication Date:
- OSTI Identifier:
- 22492830
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CARRIERS; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; JUNCTION DIODES; LEAKAGE CURRENT; OPTIMIZATION; PERFORMANCE; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K
Citation Formats
Teii, Kungen, Mizusako, Yusei, Hori, Takuro, Matsumoto, Seiichiro, and Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047. Thermal stability of boron nitride/silicon p-n heterojunction diodes. United States: N. p., 2015.
Web. doi:10.1063/1.4932640.
Teii, Kungen, Mizusako, Yusei, Hori, Takuro, Matsumoto, Seiichiro, & Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047. Thermal stability of boron nitride/silicon p-n heterojunction diodes. United States. https://doi.org/10.1063/1.4932640
Teii, Kungen, Mizusako, Yusei, Hori, Takuro, Matsumoto, Seiichiro, and Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047. 2015.
"Thermal stability of boron nitride/silicon p-n heterojunction diodes". United States. https://doi.org/10.1063/1.4932640.
@article{osti_22492830,
title = {Thermal stability of boron nitride/silicon p-n heterojunction diodes},
author = {Teii, Kungen and Mizusako, Yusei and Hori, Takuro and Matsumoto, Seiichiro and Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047},
abstractNote = {Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.},
doi = {10.1063/1.4932640},
url = {https://www.osti.gov/biblio/22492830},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 15,
volume = 118,
place = {United States},
year = {Wed Oct 21 00:00:00 EDT 2015},
month = {Wed Oct 21 00:00:00 EDT 2015}
}