skip to main content

SciTech ConnectSciTech Connect

Title: Formation of Ge nanoparticles in SiO{sub x}N{sub y} by ion implantation and thermal annealing

Germanium nanoparticles embedded within dielectric matrices hold much promise for applications in optoelectronic and electronic devices. Here we investigate the formation of Ge nanoparticles in amorphous SiO{sub 1.67}N{sub 0.14} as a function of implanted atom concentration and thermal annealing temperature. Using x-ray absorption spectroscopy and other complementary techniques, we show Ge nanoparticles exhibit significant finite-size effects such that the coordination number decreases and structural disorder increases as the nanoparticle size decreases. While the composition of SiO{sub 1.67}N{sub 0.14} is close to that of SiO{sub 2}, we demonstrate that the addition of this small fraction of N yields a much reduced nanoparticle size relative to those formed in SiO{sub 2} under comparable implantation and annealing conditions. We attribute this difference to an increase in an atomic density and a much reduced diffusivity of Ge in the oxynitride matrix. These results demonstrate the potential for tailoring Ge nanoparticle sizes and structural properties in the SiO{sub x}N{sub y} matrices by controlling the oxynitride stoichiometry.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Electronic Materials Engineering, Australian National University, Canberra 0200 (Australia)
  2. Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. Laboratório de Implantação Iônica, Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS 91501-970 (Brazil)
  4. Australian Synchrotron, 800 Blackburn Road, Clayton, Melbourne (Australia)
Publication Date:
OSTI Identifier:
22492824
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; COORDINATION NUMBER; ELECTRONIC EQUIPMENT; GERMANIUM; NANOPARTICLES; SILICON OXIDES; X-RAY SPECTROSCOPY